As NAND flash has scaled down from a process geometry of more than 50 nanometers to about 20nm, the endurance and performance have gotten worse. So far, the manufacturers have been able to make up for it. How concerned should we be with NAND flash reliability as the process geometry sinks below 20nm?
As the process geometry goes below 20nm, things get more difficult to do because fewer electrons are available per floating gate transistor, resulting in decreased write throughput and endurance as the die sizes decrease.
However, manufacturers are finding new ways to decrease the die size while producing usable flash media by using 3D die stacking, increased ECC, advanced page mapping and other techniques. We’re getting close to some physical limits, but the engineers are still finding things that can be done.
Dig deeper on Solid state storage technology
Related Q&A from Dennis Martin
Dennis Martin of Demartek discusses creating DIY hybrid SSD arrays by adding flash drives to an existing array.continue reading
Dennis Martin of Demartek discusses whether NAND flash wear-out is still a concern in this Expert Answer.continue reading
Dennis Martin of Demartek discusses differences between various PCIe solid-state cards available today in this Expert Answer.continue reading
Have a question for an expert?
Please add a title for your question
Get answers from a TechTarget expert on whatever's puzzling you.