What is spin-transfer torque memory technology and what is it designed to address that current flash memory chips can't?
Spin-transfer torque memory technology leverages a concept that electrons or other particles have a "known" property of angular momentum referred to as "spin," which is one of two types of quantum mechanics angular momentum. The other type of spin is called orbital angular momentum.
Spin-transfer torque memory technology utilizes electric current through a magnetic field to change the electron spin to an up or down state. Spin-transfer torque memory technology is also known as STT-RAM. STT-RAM has the potential to be a higher-density, lower-cost, lower-power non-volatile storage option than flash. STT-RAM also is not a destructive technology like flash and does not have flash's wear-life issues.
But, like many of the developing non-volatile storage technologies such as phase change memory (PCM), Racetrack, memristor, MRAM, MeRAM, and others, it is not yet ready for prime time. STT-RAM currently requires a bit too much electrical current to re-orient the spin. That's changing rapidly, but it is not a commercially available technology at this time.
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