Solid state Definitions

Browse Definitions
Search Definitions
  • T

    Tier 0

    Tier 0 (tier zero) is a level of data storage that is faster, and perhaps more expensive, than any other level in the storage hierarchy.

  • TLC flash (triple level cell flash)

    TLC flash (triple level cell flash) is a type of solid-state NAND flash memory that stores three bits of data per cell of flash media.

  • TRIM

    TRIM (also spelled trim) is a specific command in a serial ATA (SATA) interface that tells an underlying NAND flash solid state storage device which data it can erase.

  • tunnel injection

    Tunnel injection, also called Fowler-Nordheim tunnel injection, is the process by which data is written to NAND flash memory.  

  • tunnel release

    Tunnel release, also called Fowler-Nordheim tunnel release, is the process by which data is erased from NAND flash memory.  

  • W

    wear leveling

    Wear leveling is a process that is designed to extend the life of solid state storage devices. Solid state storage is made up of microchips that store data in blocks.

  • write amplification

    Write amplification is an issue that occurs in solid state storage devices that can decrease the lifespan of the device and impact performance.

  • write amplification factor (WAF)

    Write amplification factor (WAF) is a numerical value that represents the amount of data a solid state storage controller has to write in relation to the amount of data that the host’s flash controller has to write.

  • write cycle

    A write cycle is the process of recording data on a NAND flash solid state storage device. Write cycles are also called program/erase (P/E) cycles.

  • write endurance

    Write endurance is the number of program/erase (P/E cycles) that can be applied to a block of flash memory before the storage media becomes unreliable.  

-ADS BY GOOGLE

SearchCloudStorage

SearchDisasterRecovery

SearchDataBackup

SearchStorage

SearchITChannel

Close